采用70µm薄器件和空心互连的集成半桥式开关

A. Solomon, Jianfeng Li, A. Castellazzi, M. Johnson
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引用次数: 4

摘要

基于最新一代英飞凌科技70um薄型igbt和额定电压为200A/600V的二极管,开发了一种面向应用的半桥开关组装集成概念。本文采用热-力学模拟方法,优化设计了三种不同的圆柱凸点形状,以减少焊点的应力和蠕变应变的发展。仿真结果表明,凸点形状对焊点热性能的影响可以忽略不计,但与实心和厚圆柱凸点相比,薄空心圆柱凸点可以减少焊点蠕变应变的积累。进行了初步的实验测试,验证了该组件的功能。
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Integrated half-bridge switch using 70µm thin devices and hollow interconnects
An application oriented integration concept for half-bridge switch assembly has been developed based on the latest generation Infineon Technologies 70um thin IGBTs and diodes, rated at 200A/600V. This paper addresses the thermo-mechanical simulation to optimize the designed assembly along with three different cylinderical bump shapes for reducing the stress and creep strain development in the solder joints. The simulation results show that effect of the bump shape on thermal performance is negligible, however thin hollow cylinder type can reduce the creep strain accumulation in the solder joints as compared to solid and thick cylinder bumps. A preliminary experimental test was also carried out and the functionality of the assembly was demonstrated.
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