0.18um 3.1-10.6GHz CMOS UWB LNA，增益25±1dB

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI:10.1063/1.3586977

S. Shamsadini, F. Kashani, Neda Bathaei

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引用次数: 1

摘要

报道了一种采用标准0.18um CMOS技术的3.1-10.6GHz超宽带低噪声放大器(UWB LNA)。提出了一种带级联码的两级共门级联UWB LNA，在全频段内实现了10dB以上的输入输出回波损耗、26dB的高增益和2.9dB的NF。提议的LNA从1.8V电源消耗10mW。与以往的工作相比，所设计的LNA具有优异的高增益。

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0.18um 3.1–10.6GHz CMOS UWB LNA with 25 ±1dB gain

A 3.1–10.6GHz ultra-wideband low noise-amplifier (UWB LNA) using standard 0.18um CMOS technology has been reported. A two-stage, common-gate in cascade with cascode, UWB LNA has been proposed to achieve more than 10dB input and output return loss, high gain of 26dB, and NF of 2.9dB over the full frequency band. The proposed LNA consumes 10mW from 1.8V supply. The designed LNA has an excellent high gain in comparison with previous works.

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2010 International Conference on Enabling Science and Nanotechnology (ESciNano)

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