{"title":"栅极全锗nMOSFET的三维蒙特卡罗模拟","authors":"Shufang Zhu, K. Wei, G. Du, Xiaoyan Liu","doi":"10.1142/S0218126613400239","DOIUrl":null,"url":null,"abstract":"Gate-All-Around mosfets have been investigated as promising new device structures, and Germanium is used for its high carrier mobility. In this paper, a 3D parallel Monte Carlo simulation of GAA Ge Nanowire nMOSFET with Effective Potential Method is implemented. Compared the simulation results with classical results, we can see that the quantum effects have an affect on the distribution of density, velocity and energy, and they make a decrease on the drain current as well.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"3D Monte Carlo simulation of Gate-All-Around Germanium nMOSFET\",\"authors\":\"Shufang Zhu, K. Wei, G. Du, Xiaoyan Liu\",\"doi\":\"10.1142/S0218126613400239\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gate-All-Around mosfets have been investigated as promising new device structures, and Germanium is used for its high carrier mobility. In this paper, a 3D parallel Monte Carlo simulation of GAA Ge Nanowire nMOSFET with Effective Potential Method is implemented. Compared the simulation results with classical results, we can see that the quantum effects have an affect on the distribution of density, velocity and energy, and they make a decrease on the drain current as well.\",\"PeriodicalId\":6363,\"journal\":{\"name\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1142/S0218126613400239\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/S0218126613400239","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
3D Monte Carlo simulation of Gate-All-Around Germanium nMOSFET
Gate-All-Around mosfets have been investigated as promising new device structures, and Germanium is used for its high carrier mobility. In this paper, a 3D parallel Monte Carlo simulation of GAA Ge Nanowire nMOSFET with Effective Potential Method is implemented. Compared the simulation results with classical results, we can see that the quantum effects have an affect on the distribution of density, velocity and energy, and they make a decrease on the drain current as well.
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