{"title":"Cu2ZnSnS4薄膜的残余应力分析","authors":"Sungwook Hong, Chan Kim","doi":"10.1109/PVSC.2018.8547475","DOIUrl":null,"url":null,"abstract":"The aim of this study is to determine the residual stress within a CZTS thin film, which causes changes to several characteristics of the thin film, including the band gap energy and lattice constants. The CZTS thin film was manufactured using a metal precursor. The crystallization of the CZTS photo absorber was confirmed by XRD analysis, Raman spectrum, and HRTEM. The energy of the band gap of the CZTS thin film was found to be 1.47eV, and the crystalline structure was determined to be under a compressive residual stress of 15.269 MPa.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"15 1","pages":"0823-0826"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Residual Stress Analysis of a Cu2ZnSnS4 Thin Film\",\"authors\":\"Sungwook Hong, Chan Kim\",\"doi\":\"10.1109/PVSC.2018.8547475\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of this study is to determine the residual stress within a CZTS thin film, which causes changes to several characteristics of the thin film, including the band gap energy and lattice constants. The CZTS thin film was manufactured using a metal precursor. The crystallization of the CZTS photo absorber was confirmed by XRD analysis, Raman spectrum, and HRTEM. The energy of the band gap of the CZTS thin film was found to be 1.47eV, and the crystalline structure was determined to be under a compressive residual stress of 15.269 MPa.\",\"PeriodicalId\":6558,\"journal\":{\"name\":\"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)\",\"volume\":\"15 1\",\"pages\":\"0823-0826\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2018.8547475\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2018.8547475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The aim of this study is to determine the residual stress within a CZTS thin film, which causes changes to several characteristics of the thin film, including the band gap energy and lattice constants. The CZTS thin film was manufactured using a metal precursor. The crystallization of the CZTS photo absorber was confirmed by XRD analysis, Raman spectrum, and HRTEM. The energy of the band gap of the CZTS thin film was found to be 1.47eV, and the crystalline structure was determined to be under a compressive residual stress of 15.269 MPa.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
