Yang Gu, Yuming Zhang, Yimen Zhang, Hongliang Lu, Renxu Jia
{"title":"SiC肖特基二极管逆变器的分析与仿真","authors":"Yang Gu, Yuming Zhang, Yimen Zhang, Hongliang Lu, Renxu Jia","doi":"10.1109/EDSSC.2011.6117728","DOIUrl":null,"url":null,"abstract":"The effect of the diode reverse recovery on the performance of inverters is analyzed. The PSpice simulation of the SPWM full bridge inverter has been performed with the Si p-i-n ultra fast diode and the SiC Schottky diode respectively used as the free wheeling diode under the same condition. With their comparison, the results show that the SiC Schottky diode can greatly reduce the power loss of inverters. Further more, the effects of diode parameter CJO on reverse recovery characteristics have been discussed.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":"19 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis and simulation of inverter employing SiC Schottky diode\",\"authors\":\"Yang Gu, Yuming Zhang, Yimen Zhang, Hongliang Lu, Renxu Jia\",\"doi\":\"10.1109/EDSSC.2011.6117728\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of the diode reverse recovery on the performance of inverters is analyzed. The PSpice simulation of the SPWM full bridge inverter has been performed with the Si p-i-n ultra fast diode and the SiC Schottky diode respectively used as the free wheeling diode under the same condition. With their comparison, the results show that the SiC Schottky diode can greatly reduce the power loss of inverters. Further more, the effects of diode parameter CJO on reverse recovery characteristics have been discussed.\",\"PeriodicalId\":6363,\"journal\":{\"name\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"volume\":\"19 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2011.6117728\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117728","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis and simulation of inverter employing SiC Schottky diode
The effect of the diode reverse recovery on the performance of inverters is analyzed. The PSpice simulation of the SPWM full bridge inverter has been performed with the Si p-i-n ultra fast diode and the SiC Schottky diode respectively used as the free wheeling diode under the same condition. With their comparison, the results show that the SiC Schottky diode can greatly reduce the power loss of inverters. Further more, the effects of diode parameter CJO on reverse recovery characteristics have been discussed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
