M. Yabuuchi, Yohei Sawada, T. Sano, Y. Ishii, S. Tanaka, Miki Tanaka, K. Nii
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A 6.05-Mb/mm2 16-nm FinFET double pumping 1W1R 2-port SRAM with 313 ps read access time
High-density and low-leakage 1W1R 2-port (2P) SRAM is realized by 6T 1-port SRAM bitcell with double pumping internal clock in 16 nm FinFET technology. Proposed clock generator with address latch circuit enables robust timing design without sever setup/hold margin. We designed a 256 kb 1W1R 2P SRAM macro which achieves the highest density of 6.05 Mb/mm2. Measured data shows that a 313 ps of read-access-time is observed at 0.8 V. Standby leakage power in resume standby (RS) mode is reduced by 79% compared to the conventional dual-port SRAM without RS.
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