一种高性能、低噪声的CMOS图像传感器，在隔离氧化物下具有可扩展的光电二极管

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609474

K. Itonaga, H. Abe, I. Yoshihara, T. Hirayama

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引用次数: 8

摘要

我们通过在隔离氧化物下扩展埋地光电二极管，实现了具有高饱和电子容量和高灵敏度的2.5 μ m平方像素，实现了传统STI的低暗电流和三倍Qs值，并且使用Cu工艺比使用Al工艺可提高20%的灵敏度增益

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A high-performance and low-noise CMOS image sensor with an expanding photodiode under the isolation oxide

We've realized a 2.5-mum square pixel with high saturation electron capacity and sensitivity, which realizes the low dark current as well as triple Qs value of the conventional STI, by expanding the buried photodiode under the isolation oxide, and the sensitivity gain will be 20% higher using the Cu process than is possible with the Al process

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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