Effect of Sb on GaNAs intermediate band solar cells

We present a comparative study on the material properties and two photon excitation (TPE) experiments involving three bands between a GaNAs and a GaNAsSb absorber designed for intermediate band solar cells. The absorber layers were sandwiched between p-AlGaAs emitter layers and n-AlGaAs IB barrier layers. This permits production of above the bandgap electron-hole pairs by TPE involving two subband photons with the intermediate band as the stepping stone. A recovery in the carrier population in the intermediate band of the GaNAsSb absorber was realized due to an improved material quality. An enhancement in the photocurrent production due to TPE, and an associated improvement in the open circuit voltage were observed.