基于bjt的温度-数字转换器，在- 70°C到125°C范围内误差为±60mK (3σ)

2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits) Pub Date : 2016-06-15 DOI:10.1109/VLSIC.2016.7573531

B. Yousefzadeh, S. H. Shalmany, K. Makinwa

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引用次数: 25

摘要

本文介绍了迄今为止报道的最精确的基于bjt的CMOS温度-数字转换器(TDC)，在-70°C至125°C范围内的误差为±60mK (3σ)。这比最先进的技术好2倍，尽管在工艺(160nm)中实现，只能提供低β f(2)。这种水平的性能是通过改进的β f补偿方案，使用动态误差校正技术来抑制非bjt相关的误差，以及使用基于电流重用ota的节能变焦adc来实现的。这些技术还导致非常低的电源灵敏度(12mK/V)，从而在1.5V至2V的电源电压范围内保持TDC精度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A BJT-based temperature-to-digital converter with ±60mK (3σ) inaccuracy from −70°C to 125°C in 160nm CMOS

This paper presents the most accurate BJT-based CMOS temperature-to-digital converter (TDC) ever reported, with an inaccuracy of ±60mK (3σ) from -70°C to 125°C. This is 2× better than the state-of-the-art, despite being implemented in a process (160nm) that only offers low-β_F (<;5) PNPs. It is also the most energy-efficient ever reported, with a resolution FOM of 7.3pJ°C². This level of performance is achieved by an improved β_F-compensation scheme, the use of dynamic error correction techniques to suppress non-BJT related errors and the use of an energy-efficient zoom-ADC based on current-reuse OTAs. These techniques also result in very low power-supply sensitivity (12mK/V), thus maintaining TDC accuracy for supply voltages ranging from 1.5V to 2V.

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2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)

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