用于系统面板(SoP)应用的0.1/spl mu/m多晶硅薄膜晶体管

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609507

B. Tsui, Chia-Pin Lin, Chih-Feng Huang, Y. Xiao

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引用次数: 12

摘要

薄有源层、全硅化源/漏极(S/D)、改进肖特基势垒、高介电常数(高k)栅极介电和金属栅极技术集成在一起，实现了高性能TFTs。成功制备了通道长度为0.1 μ m的器件。低阈值电压、低亚阈值摆幅、高有效迁移率、低S/D电阻、高通断电流比和良好的阈值电压控制

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0.1/spl mu/m poly-Si thin film transistors for system-on-panel (SoP) applications

Thin active layer, fully-silicided source/drain (S/D), modified Schottky barrier, high dielectric constant (high-k) gate dielectric, and metal gate technologies are integrated to realize high performance TFTs. Devices with 0.1 mum channel length were fabricated successfully. Low threshold voltage, low subthreshold swing, high effective mobility, low S/D resistance, high on/off current ratio, and good control of threshold voltage are demonstrated

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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