用于冷却2.5D集成高功率IC器件的TSV介面嵌入微流控热性能评估

Shengli Ma, Tingting Lian, Han Cai, Liu-lin Hu, Shuwei He
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引用次数: 2

摘要

针对2.5D集成高功率集成电路器件的散热问题,提出了一种嵌入并行线性微通道的TSV中间体,并对其组装和热性能进行了评价。样品尺寸约为9.45 mm9.5 mm,宽度/间距为100 μm/100 μm,深度为300 μm,进出口区设有对称导流结构。采用DRIE工艺和Si-Si直接键合工艺制备了TSV中间体嵌入式微通道。对于热性能评估,将定制的高功率IC芯片与现场温度传感器集成在TSV中间层上,并通过PCB板连接。根据目前的试验结果,当等效热流输入密度上升到283 w/cm2,总热输入约66.55 w, DI硅片设置为流量100 ml/min,温升到95.1℃,压降为40 Kpa时,初步验证其具有良好的散热能力。
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Thermal Property Evaluation of TSV interposer Embedded Microfluidics for Cooling 2.5D Integrated High Power IC Device
For cooling the 2.5D integrated high power IC device, this paper present a TSV interposer embedded parallel linear microchannels, demonstrate its assembly and thermal property evaluation. The sample is about 9.45 mm  9.5 mm in size, with liner microchannel 100 μm/100 μm in the width/space, 300 μm in the depth, a symmetric flow guiding structure arranged in inlet/outlet region. TSV interposer embedded microchannel is fabricated with DRIE process and Si-Si direct bonding process. For thermal property evaluation, a customized high power IC chip with on site temperature sensor is integrated on the TSV interposer and wired by PCB board. According to the current test results, when the equivalent thermal flux input density is risen to 283 w/cm2, a total thermal input about 66.55 W, the DI wafer is set at a flow rate of 100 ml/min, the temperature rise to 95.1°C, and the pressure drop is 40 Kpa, which is preliminarily verified that it has a good cooling capability.
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