l形隧道场效应晶体管驼峰效应研究

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243306

Sang Wan Kim, W. Choi, Hyungjin Kim, Min-Chul Sun, H. Kim, Byung-Gook Park

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引用次数: 9

摘要

本文研究了l型隧道场效应晶体管(tfet)的驼峰效应。结果表明，驼峰效应是由两个不同的导通电压引起的。通过器件仿真，优化了源结设计以抑制驼峰效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation on hump effects of L-shaped tunneling filed-effect transistors

In this paper, hump effects of L-shaped tunneling field-effect transistors (TFETs) have been investigated. It turns out that the hump effects are originated from the two different turn-on voltages (Vturn-on's). By using device simulation, the source junction design has been optimized in order to suppress the hump effects.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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