高速切换MRAM与基于mgo的隧道结

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609496

J. Slaughter, R. Dave, M. Durlam, G. Kerszykowski, Ken Smith, K. Nagel, B. Feil, J. Calder, M. Deherrera, B. Garni, S. Tehrani

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引用次数: 29

摘要

我们在此报告了新一代高磁阻比(MR)磁隧道结(MTJ)材料与90纳米CMOS前端逻辑工艺的首次集成。与标准的alox基材料相比，这种具有MgO隧道屏障的新材料显着增加了读取信号。90 nm CMOS测试车具有8 kb的1T1MTJ存储单元阵列，具有两条正交程序线，与位易轴呈45度角，用于拨动开关。演示了读和写切换操作

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High speed toggle MRAM with mgO-based tunnel junctions

We report here the first integration of a new generation of high magnetoresistance-ratio (MR) magnetic tunnel junction (MTJ) material with a 90 nm CMOS front-end logic process. This new material, with MgO tunnel barriers, significantly increased the read signal over standard AlOx-based material. The 90 nm CMOS test vehicle has 8 kb arrays of 1T1MTJ memory cells with two orthogonal program lines oriented at 45deg from the bit easy axis for toggle switching. Read and toggle-write operations are demonstrated

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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