垂直腔半导体激光器中的对称性破缺

IF 1.1 Q4 QUANTUM SCIENCE & TECHNOLOGY Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI:10.1364/qo.1997.qfb.6
J. Woerdman, A. V. van Doorn, M. V. van Exter
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引用次数: 1

摘要

可以说,半导体垂直腔面发射激光器(VCSELs)的极化行为在基本层面上还没有被理解。尽管VCSEL具有名义上的各向异性,但偏振通常被报道为线性的,但不是很稳定。大多数作者将这种行为与由于器件制造不完善而导致的固有各向异性联系起来,尽管也提出增益介质的固有非线性来解释线极化。我们参与了一项详细的研究[1-4],研究了VCSEL的各种各向异性、它们的相互作用、它们的操纵以及它们对VCSEL极化的影响。我们通过实验发现,实际VCSEL的极化在很大程度上可以解释为线性各向异性的结果;非线性最多只起很小的作用。
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Symmetry Breaking in Vertical-Cavity Semiconductor Lasers
It seems fair to say that the polarization behavior of semiconductor Vertical-Cavity Surface-Emitting Lasers (VCSELs) is not understood on a fundamental level. In spite of the nominal anisotropy of a VCSEL the polarization is usually reported as being linear, but not very stable. Most authors associate this behavior with native anisotropies due to imperfect device fabrication although also intrinsic nonlinearities of the gain medium have been put forward for explaining the linear polarization. We are involved in a detailed study [1-4] of the various anisotropies of a VCSEL, their interplay, their manipulation and the consequences thereof for the VCSEL polarization. We have found experimentally that the polarization of a practical VCSEL can be largely explained as a consequence of linear anisotropies; nonlinearities play at most a minor role.
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来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
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