Al/sub x/Ga/sub 1-x/As/GaAs和GaAs/ in /sub y/Ga/sub 1-y/As材料体系中量子阱太阳能电池的电压性能

G. Haarpaintner, J. Barnes, K. Barnham, J. P. Connolly, S. S. Dosarajh, J. Nelson, C. Roberts, C. Button, G. Hili, M. Pate, J. Roberts
{"title":"Al/sub x/Ga/sub 1-x/As/GaAs和GaAs/ in /sub y/Ga/sub 1-y/As材料体系中量子阱太阳能电池的电压性能","authors":"G. Haarpaintner, J. Barnes, K. Barnham, J. P. Connolly, S. S. Dosarajh, J. Nelson, C. Roberts, C. Button, G. Hili, M. Pate, J. Roberts","doi":"10.1109/WCPEC.1994.520648","DOIUrl":null,"url":null,"abstract":"The open circuit voltage V/sub oc/ and reference voltage V/sub ref/ defined as a measure of the dark current quality, have been studied for a large number of quantum well (QW) solar cells and homogenous control cells. Samples were grown in the Al/sub x/Ga/sub 1-x/As/GaAs and GaAs/In/sub y/Ga/sub 1-y/As material systems. For both combinations, QW solar cells show a better voltage performance in V/sub oc/ and V/sub ref/ than one would expect from a single bandgap solar cell with the same effective absorption bandgap E/sub a/. For the AlGaAs/GaAs cells, V/sub oc/ is related to structural parameters of the QW cells such as the well width L/sub W/ and the Al fraction x. For the strained GaAs/InGaAs cells a relationship is found between V/sub ref/ and the barrier width L/sub B/, which is a dominant parameter in determining strain relaxation and defect formation at a fixed In fraction.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Voltage performance of quantum well solar cells in the Al/sub x/Ga/sub 1-x/As/GaAs and the GaAs/In/sub y/Ga/sub 1-y/As material systems\",\"authors\":\"G. Haarpaintner, J. Barnes, K. Barnham, J. P. Connolly, S. S. Dosarajh, J. Nelson, C. Roberts, C. Button, G. Hili, M. Pate, J. Roberts\",\"doi\":\"10.1109/WCPEC.1994.520648\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The open circuit voltage V/sub oc/ and reference voltage V/sub ref/ defined as a measure of the dark current quality, have been studied for a large number of quantum well (QW) solar cells and homogenous control cells. Samples were grown in the Al/sub x/Ga/sub 1-x/As/GaAs and GaAs/In/sub y/Ga/sub 1-y/As material systems. For both combinations, QW solar cells show a better voltage performance in V/sub oc/ and V/sub ref/ than one would expect from a single bandgap solar cell with the same effective absorption bandgap E/sub a/. For the AlGaAs/GaAs cells, V/sub oc/ is related to structural parameters of the QW cells such as the well width L/sub W/ and the Al fraction x. For the strained GaAs/InGaAs cells a relationship is found between V/sub ref/ and the barrier width L/sub B/, which is a dominant parameter in determining strain relaxation and defect formation at a fixed In fraction.\",\"PeriodicalId\":20517,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCPEC.1994.520648\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCPEC.1994.520648","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

开路电压V/sub /和基准电压V/sub /作为暗电流质量的度量,已经在大量量子阱(QW)太阳能电池和均质控制电池中进行了研究。样品在Al/sub x/Ga/sub 1-x/As/GaAs和GaAs/ in /sub y/Ga/sub 1-y/As材料体系中生长。对于这两种组合,QW太阳能电池在V/sub oc/和V/sub ref/下表现出比具有相同有效吸收带隙E/sub a/的单个带隙太阳能电池更好的电压性能。对于AlGaAs/GaAs细胞,V/sub oc/与QW细胞的结构参数有关,如井宽L/sub W/和Al分数x。对于应变GaAs/InGaAs细胞,V/sub ref/与势垒宽度L/sub B/之间存在关系,这是决定固定in分数下应变松弛和缺陷形成的主要参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Voltage performance of quantum well solar cells in the Al/sub x/Ga/sub 1-x/As/GaAs and the GaAs/In/sub y/Ga/sub 1-y/As material systems
The open circuit voltage V/sub oc/ and reference voltage V/sub ref/ defined as a measure of the dark current quality, have been studied for a large number of quantum well (QW) solar cells and homogenous control cells. Samples were grown in the Al/sub x/Ga/sub 1-x/As/GaAs and GaAs/In/sub y/Ga/sub 1-y/As material systems. For both combinations, QW solar cells show a better voltage performance in V/sub oc/ and V/sub ref/ than one would expect from a single bandgap solar cell with the same effective absorption bandgap E/sub a/. For the AlGaAs/GaAs cells, V/sub oc/ is related to structural parameters of the QW cells such as the well width L/sub W/ and the Al fraction x. For the strained GaAs/InGaAs cells a relationship is found between V/sub ref/ and the barrier width L/sub B/, which is a dominant parameter in determining strain relaxation and defect formation at a fixed In fraction.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Optimisation of photovoltaic water pumps coupled with an interfacing pulse width modulated DC/AC inverter power conditioning device Module orientated photovoltaic inverters-a comparison of different circuits Japanese space solar cell activities-GaAs and Si InP solar cell improvement by inverse delta-doping Improvement of AlGaAs solar cell grown on Si substrate
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1