GaInAsP/InP二维光子晶体光子带隙的等效透射测量

IF 1.1 Q4 QUANTUM SCIENCE & TECHNOLOGY Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI:10.1364/qo.1997.qtha.3
T. Baba, M. Ikeda, N. Kamizawa
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引用次数: 0

摘要

半导体光子晶体是实现自发发射控制,即提高自发发射率(SER)和自发发射因子的有希望的候选者。图1总结了不同尺寸光子晶体的结构示意图以及光子带隙(PBGs)抑制下对应的波矢量空间。由于几乎完美的PBG和单模定域状态,三维结构是理想的。然而,光学波长范围内的结构仍然难以制造。我们已经研究了二维结构1,2)来确认光子晶体的初步效应。在本研究中,我们简单地预测了二维结构中的自发发射控制,并报道了在GaInAsP/InP二维光子晶体中观察PBG的实验。
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Observation of Photonic Bandgap in GaInAsP/InP 2D Photonic Crystals by Equivalent Transmission Measurement
Semiconductor photonic crystals are promising candidates for realizing spontaneous emission control, i.e., enhancement of spontaneous emission rate (SER) and spontaneous emission factor. Schematic structure of various dimensions of photonic crystal and corresponding wave vector space inhibited by photonic bandgaps (PBGs) are summarized in Fig. 1. Due to the almost perfect PBG and single mode localized state, 3D structures are ideal. However, structures for optical wavelength range are still difficult to fabricate. We have studied 2D structures1,2) to confirm preliminary effects of photonic crystals. In this study, we simply predict the spontaneous emission control in 2D structures, and report the experiment to observe PBG in GaInAsP/InP 2D photonic crystals.
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来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
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