S. Datta, T. Ashley, J. Brask, L. Buckle, M. Doczy, M. Emeny, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T. Phillips, D. Wallis, P. Wilding, R. Chau
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85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications
We demonstrate for the first time 85nm gate length enhancement and depletion mode InSb quantum well transistors with unity gain cutoff frequency, fT, of 305 GHz and 256 GHz, respectively, at 0.5V VDS, suitable for high speed, very low power logic applications. The InSb transistors demonstrate 50% higher unity gain cutoff frequency, fT, than silicon NMOS transistors while consuming 10 times less active power
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