结晶统计对相变存储器数据保留的影响

A. Redaelli, D. Ielmini, A. Lacaita, F. Pellizzer, A. Pirovano, R. Bez
{"title":"结晶统计对相变存储器数据保留的影响","authors":"A. Redaelli, D. Ielmini, A. Lacaita, F. Pellizzer, A. Pirovano, R. Bez","doi":"10.1109/IEDM.2005.1609460","DOIUrl":null,"url":null,"abstract":"The stochastic nature of percolation is shown as a possible issue for retention in PCM devices, due to the occurrence of unlikely crystallization events that early decrease the device resistance. Failure time dispersions at high temperatures are measured and analyzed through a crystallization Monte Carlo model. A physical insight into nucleation and growth mechanisms is thus provided and a maximum working temperature of 105degC is extracted to guarantee, on large statistics, the 10 years data retention requirement for non volatile applications","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"54 1","pages":"742-745"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"37","resultStr":"{\"title\":\"Impact of crystallization statistics on data retention for phase change memories\",\"authors\":\"A. Redaelli, D. Ielmini, A. Lacaita, F. Pellizzer, A. Pirovano, R. Bez\",\"doi\":\"10.1109/IEDM.2005.1609460\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The stochastic nature of percolation is shown as a possible issue for retention in PCM devices, due to the occurrence of unlikely crystallization events that early decrease the device resistance. Failure time dispersions at high temperatures are measured and analyzed through a crystallization Monte Carlo model. A physical insight into nucleation and growth mechanisms is thus provided and a maximum working temperature of 105degC is extracted to guarantee, on large statistics, the 10 years data retention requirement for non volatile applications\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"54 1\",\"pages\":\"742-745\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"37\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609460\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 37

摘要

渗透的随机性质显示为PCM器件中保留的可能问题,因为不太可能发生的结晶事件会早期降低器件电阻。通过结晶蒙特卡罗模型对高温下的失效时间分散进行了测量和分析。因此,提供了对成核和生长机制的物理见解,并提取了105℃的最高工作温度,以保证在大统计数据上,非易失性应用的10年数据保留要求
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Impact of crystallization statistics on data retention for phase change memories
The stochastic nature of percolation is shown as a possible issue for retention in PCM devices, due to the occurrence of unlikely crystallization events that early decrease the device resistance. Failure time dispersions at high temperatures are measured and analyzed through a crystallization Monte Carlo model. A physical insight into nucleation and growth mechanisms is thus provided and a maximum working temperature of 105degC is extracted to guarantee, on large statistics, the 10 years data retention requirement for non volatile applications
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