金属接触石墨烯掺杂的DFT研究

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870456

P. Khakbaz, F. Driussi, A. Gambi, Paolo Giannozzi, S. Venica, David Esseni, A. Gaho, S. Kataria, Max C. Lemme

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引用次数: 4

摘要

利用密度泛函理论(DFT)对金属-石墨烯(M-G)接触电阻RC的实验结果进行了深入研究。模拟使我们能够建立一个一致的图片，解释RC依赖于本工作中使用的金属接触材料和施加的后门电压。在这方面，M-G距离是决定RC行为的最重要因素。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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DFT study of graphene doping due to metal contacts

The experimental results of Metal-graphene (M-G) contact resistance RC have been investigated in-depth by means of Density Functional Theory (DFT). The simulations allowed us to build a consistent picture explaining the RC dependence on the metal contact materials employed in this work and on the applied back-gate voltage. In this respect, the M-G distance is paramount in determining the RC behavior.

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2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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