Device-to-circuit modeling approach to Metal – Insulator – 2D material FETs targeting the design of linear RF applications

We present a physics-based device-to-circuit modeling approach to metal – insulator – 2D material based field-effect transistors (2DFETs). Starting from numerical simulations based on the self-consistent solution of the 2D Poisson and 1D Drift-Diffusion equations, we obtain the electrostatics and current-voltage characteristics of such devices. Then, assuming small-signal operation, a charge-based equivalent circuit is fed with the small-signal parameters computed from the numerical results and then it is implemented in a standard circuit simulator. This framework enables the design and assessment of linear radio-frequency applications based on novel and emergent 2DFETs. The approach has been applied to an experimental MoS2 transistor by benchmarking the transfer characteristics and then predicting the expected performance of such device as a common-source power amplifier, for instance a power gain of 8.6 dB at 2.45 GHz.