铜丝和钯铜丝封装可靠性和成型化合物

H. Abe, Dong Kang, T. Yamamoto, T. Yagihashi, Y. Endo, H. Saito, T. Horie, H. Tamate, Y. Ejiri, N. Watanabe, T. Iwasaki
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引用次数: 50

摘要

由于金的价格暴涨,铜线正在迅速取代金线。但是,铜线包的湿度可靠性比金线包差。镀钯铜线包的湿度可靠性虽然优于镀铜线包,但仍不如镀金线包。没有足够的关于失效机制的信息。在失效分析中,x-section被广泛用于Cu/Al IMC失效后的识别。但是,x剖面是腐蚀反应的结果,并没有显示腐蚀前的IMC状态。因此,无法准确估计其破坏机制。我们利用化学模型模拟预测了在金属丝键合后会产生哪些类型的IMC,以及哪种类型的IMC在HAST过程中更容易被腐蚀。用解吸能来估计特定Cu/Al IMC与氯离子之间的反应活性。模拟结果表明,富Cu和贫Cu的Cu/Al IMC的形成,富Cu IMC是由氯离子腐蚀形成的。这些化学模型模拟是了解Cu/Al IMC腐蚀机理的有效途径。此外,对镀钯铜丝进行了化学模型模拟,探讨了钯在Cu/Al IMC中存在和分布的影响。分散Pd有助于形成新的Cu/Al/Pd内嵌层膜,取代易腐蚀的富Cu/Al内嵌层膜。Pd抑制了Cu、Al和Cl离子在表面的扩散。还讨论了Pd对Cl离子的均匀捕获效应。为了提高铜丝的湿度可靠性,采用化学模型模拟技术研制了新型离子捕集器。使用离子捕集剂开发的模塑化合物对铜丝的偏置HAST有显著改善,甚至优于传统的铜丝兼容模塑化合物。
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Cu wire and Pd-Cu wire package reliability and molding compounds
Cu wire is drastically replacing Au wire due to surge of Au price. However, Cu wire package has poorer humidity reliability than Au wire package. Although Pd coated Cu wire package could show better humidity reliability than Cu wire, it is still worse than Au. Enough information regarding failure mechanism was not available. For failure analysis, x-section has been widely used to identify the Cu/Al IMC after failure. However, the x-section is the results of corrosion reaction and doesn't show the IMC status before corrosion. Therefore, the failure mechanism could not be estimated precisely. We used chemical model simulation to predict what kinds of IMC could be created after wire bonding, then which IMC could be corroded more easily during HAST. The Desorption energy was used to estimate reactivity between specified Cu/Al IMC and chlorine ion. The simulation suggested that the formation of Cu rich and Cu poor Cu/Al IMC and the Cu rich IMC was estimated to be corroded by chlorine ion. These chemical model simulations are the effective way to have fundamental understanding of the mechanism of Cu/Al IMC corrosion. Furthermore, chemical model simulation for Pd coated Cu wire was done to explore the effect of Pd existence and distribution of Pd in Cu/Al IMC. Dispersed Pd contributed to create new IMC of Cu/Al/Pd instead of easily corroded Cu rich Cu/Al IMC. Cu and Al diffusion and also Cl ion diffusion were inhibited by Pd at surface. Even Cl ion catching effect by Pd is also discussed. To improve humidity reliability performance with Cu wire, we developed new ion trapper using chemical model simulation technique. Developed molding compounds with the ion trapper showed significant improvement at bias HAST with Cu wire, which was even better than conventional Cu wire compatible molding compounds.
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Parasitic electrical and electromagnetic effects Heat management Passive electronic components Interconnection technology Reliability and maintainability
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