故障和退化问题以及电力HFET运行安全负载线的选择

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI:10.1109/RELPHY.2000.843924

D. Dieci, R. Menozzi, T. Tomasi, G. Sozzi, C. Lanzieri, C. Canali

{"title":"故障和退化问题以及电力HFET运行安全负载线的选择","authors":"D. Dieci, R. Menozzi, T. Tomasi, G. Sozzi, C. Lanzieri, C. Canali","doi":"10.1109/RELPHY.2000.843924","DOIUrl":null,"url":null,"abstract":"This work shows data of hot electron degradation of power AlGaAs/GaAs HFETs and uses them to infer general indications on the bias point dependence of the device degradation, the meaningfulness of the breakdown voltage figure of merit and the physical phenomena taking place in the devices during the stress.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"68 1","pages":"258-263"},"PeriodicalIF":0.0000,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Breakdown and degradation issues and the choice of a safe load line for power HFET operation\",\"authors\":\"D. Dieci, R. Menozzi, T. Tomasi, G. Sozzi, C. Lanzieri, C. Canali\",\"doi\":\"10.1109/RELPHY.2000.843924\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work shows data of hot electron degradation of power AlGaAs/GaAs HFETs and uses them to infer general indications on the bias point dependence of the device degradation, the meaningfulness of the breakdown voltage figure of merit and the physical phenomena taking place in the devices during the stress.\",\"PeriodicalId\":6387,\"journal\":{\"name\":\"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)\",\"volume\":\"68 1\",\"pages\":\"258-263\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2000.843924\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2000.843924","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

本工作展示了功率AlGaAs/GaAs hfet的热电子退化数据，并利用它们推断出器件退化的偏置点依赖性的一般指示，击穿电压值的意义以及应力期间器件中发生的物理现象。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Breakdown and degradation issues and the choice of a safe load line for power HFET operation

This work shows data of hot electron degradation of power AlGaAs/GaAs HFETs and uses them to infer general indications on the bias point dependence of the device degradation, the meaningfulness of the breakdown voltage figure of merit and the physical phenomena taking place in the devices during the stress.

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2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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