超1X纳米技术节点的CMOS兼容铁电器件

The Japan Society of Applied Physics Pub Date : 2017-07-28 DOI:10.7567/SSDM.2017.K-5-01

S. Müller

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摘要

自首次发现氧化铪的铁电性以来，已经过去了10年。这一根本性的突破引发了工业界和学术界的重大研发活动。本文总结了铁电HfO2 (FE-HfO2)在存储器应用中的潜力，并特别关注了高尺度CMOS技术节点。这表明，FE-HfO2可能最终使铁电存储器进入大众市场。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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CMOS Compatible Ferroelectric Devices for Beyond 1X nm Technology Nodes

10 years have passed since ferroelectricity in hafnium oxide was discovered for the first time. This fundamental breakthrough has initiated significant R&D activities in both industry and in academia. This paper summarizes the potential of ferroelectric HfO2 (FE-HfO2) for memory applications with particular focus on highly scaled CMOS technology nodes. It illustrates that FE-HfO2 might finally enable the entrance of ferroelectric memories into mass markets.

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The Japan Society of Applied Physics

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