采用新算法的单电子器件和电路模拟器

C. Wasshuber, H. Kosina, S. Selberherr
{"title":"采用新算法的单电子器件和电路模拟器","authors":"C. Wasshuber, H. Kosina, S. Selberherr","doi":"10.1109/TCAD.1996.6449164","DOIUrl":null,"url":null,"abstract":"A multipurpose single-electron device and circuit simulator is presented, with which it is possible to simulate a wide variety of single-electron devices. the simulator features among others the incorporation of co-tunneling by two different simulation methods, a graphical user interface and a graphical circuit editor. A new algorithm for the simulation of very rare events, where a Monte Carlo method is combined with a direct calculation, is outlined in detail.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"8 1","pages":"1-18"},"PeriodicalIF":0.0000,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A single-electron device and circuit simulator with a new algorithm to incorporate co-tunneling\",\"authors\":\"C. Wasshuber, H. Kosina, S. Selberherr\",\"doi\":\"10.1109/TCAD.1996.6449164\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A multipurpose single-electron device and circuit simulator is presented, with which it is possible to simulate a wide variety of single-electron devices. the simulator features among others the incorporation of co-tunneling by two different simulation methods, a graphical user interface and a graphical circuit editor. A new algorithm for the simulation of very rare events, where a Monte Carlo method is combined with a direct calculation, is outlined in detail.\",\"PeriodicalId\":100835,\"journal\":{\"name\":\"Journal of Technology Computer Aided Design TCAD\",\"volume\":\"8 1\",\"pages\":\"1-18\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Technology Computer Aided Design TCAD\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TCAD.1996.6449164\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Technology Computer Aided Design TCAD","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TCAD.1996.6449164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

提出了一种多用途的单电子器件和电路模拟器,它可以模拟各种单电子器件。该模拟器的特点之一是通过两种不同的仿真方法,图形用户界面和图形电路编辑器,结合了共同隧道。详细介绍了蒙特卡罗方法与直接计算相结合的一种非常罕见事件模拟新算法。
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A single-electron device and circuit simulator with a new algorithm to incorporate co-tunneling
A multipurpose single-electron device and circuit simulator is presented, with which it is possible to simulate a wide variety of single-electron devices. the simulator features among others the incorporation of co-tunneling by two different simulation methods, a graphical user interface and a graphical circuit editor. A new algorithm for the simulation of very rare events, where a Monte Carlo method is combined with a direct calculation, is outlined in detail.
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