硅纳米通道中施主态深化的从头算分析

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243298

D. Moraru, Y. Kuzuya, E. Hamid, T. Mizuno, M. Tabe, H. Mizuta

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引用次数: 0

摘要

我们通过从头算原子模拟分析了硅纳米结构中单个供体的能谱，发现电离能显著增强(~ 1 eV)。通过将这些发现与掺杂纳米soi - fet的实验测量相关联，可以明确单掺杂器件在室温下隧穿操作的设计规则。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ab initio analysis of donor state deepening in Si nano-channels

We analyzed by ab initio atomistic simulations the energy spectrum of individual donors in Si nanostructures and found significantly enhanced ionization energy (~ 1 eV). By correlating these findings to experimental measurements of doped nanoscale SOI-FETs, design rules can be clarified for tunneling operation of single-dopant devices towards room temperature.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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