使用V族元素掺杂CdTe吸收电池

A. Danielson, A. Munshi, Anna Kindvall, S. Swain, K. Barth, K. Lynn, W. Sampath
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引用次数: 2

摘要

采用掺杂1018cc-1的原料,将砷掺杂剂掺入高效CdTe电池吸收层中,实现薄膜升华。这项工作的目标是开发一种可行的方法来创造一个等于或大于目前使用铜掺杂使用CuCl处理可以实现的空穴密度。与类似结构的掺杂铜器件相比,砷的掺杂导致了开路电压(VOC)的适度增加和填充因子和转换效率的大幅提高。所有实验都是在镉超压存在的情况下进行的,以促进碲空位位置的掺杂激活。砷的掺入使用次级离子质谱法(SIMS)以4E +16个原子/cc-1的速度测量,大约是作者先前观察到的掺入量的四倍。采用CdSeTe/CdTe梯度吸收剂并掺杂砷,可获得16.79%的转化效率。
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Doping CdTe Absorber Cells using Group V Elements
Arsenic dopant was incorporated in CdTe absorber layers in high-efficiency CdTe cells using feedstock doped with 1018cc-1for sublimation of films. The goal of the work was to develop a feasible method for creating a hole density equal to, or greater than that currently achievable using copper doping using a CuCl treatment. Doping with arsenic resulted in a modest increase in open-circuit voltage (VOC) and a large improvement in fill-factor and conversion efficiency when compared with copper-doped devices with similar structure. All experiments were performed in the presence of cadmium overpressure to encourage dopant activation in tellurium vacancy sites. Arsenic incorporation was measured using Secondary Ion Mass Spectrometry (SIMS) at 4E +16 atoms/cc-1,about four times greater incorporation than previously seen by the authors. Using a CdSeTe/CdTe graded absorber and arsenic doping, a conversion efficiency of 16.79% was achieved.
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