到2018年，超薄体完全耗尽SOI金属源/漏n- mosfet和ITRS低备用功率目标

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609524

Daniel J. Connelly, Paul A. Clifton, C. Faulkner, D. Grupp

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引用次数: 15

摘要

利用2006年至2018年与ITRS LSTP目标相关的参数，对金属(肖特基)源/漏(S/D)超薄体完全耗尽SOI n沟道mosfet(单栅极和双栅极)进行了模拟。通过优化给定S/D势垒高度的S/D对通道的覆盖，可以减少断流，以匹配每年的ITRS LSTP规范。然后ITRS通流目标建立S/D障碍高度的限制

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ultra-thin-body fully depleted SOI metal source/drain n-MOSFETs and ITRS low-standby-power targets through 2018

Simulations of metal (Schottky) source/drain (S/D) ultra-thin-body fully depleted SOI n-channel MOSFETs, single and dual gate, were performed using parameters associated with ITRS LSTP targets for 2006 through 2018. By optimizing S/D-to-channel underlap for a given S/D barrier height, off-current can be reduced to match the ITRS LSTP specification for each year. ITRS on-current targets then establish limits on the S/D barrier height

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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