B. Chen, B. Gao, Y. Fu, R. Liu, L. Ma, P. Huang, F. Zhang, L. Liu, X. Liu, J. Kang, G. Lian
{"title":"hfox基RRAM的单极和双极电阻开关效应共存","authors":"B. Chen, B. Gao, Y. Fu, R. Liu, L. Ma, P. Huang, F. Zhang, L. Liu, X. Liu, J. Kang, G. Lian","doi":"10.1109/SNW.2012.6243333","DOIUrl":null,"url":null,"abstract":"Both unipolar and bipolar resistive switching behaviors are demonstrated and investigated in the TaTiN/HfOx/Pt structured RRAM devices. A physical model based on the recombination among the electron-depleted oxygen vacancies (VO2+) and the oxygen ions (O2-) released from the TaTiN electrode is proposed to clarify the co-existed bipolar and unipolar resistive switching effect. In the proposed physical model, Joule heating controlled O2- decomposition and electric-field controlled O2- drift dominate the unipolar and bipolar resistive switching behaviors, respectively.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Co-existed unipolar and bipolar resistive switching effect of HfOx-based RRAM\",\"authors\":\"B. Chen, B. Gao, Y. Fu, R. Liu, L. Ma, P. Huang, F. Zhang, L. Liu, X. Liu, J. Kang, G. Lian\",\"doi\":\"10.1109/SNW.2012.6243333\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Both unipolar and bipolar resistive switching behaviors are demonstrated and investigated in the TaTiN/HfOx/Pt structured RRAM devices. A physical model based on the recombination among the electron-depleted oxygen vacancies (VO2+) and the oxygen ions (O2-) released from the TaTiN electrode is proposed to clarify the co-existed bipolar and unipolar resistive switching effect. In the proposed physical model, Joule heating controlled O2- decomposition and electric-field controlled O2- drift dominate the unipolar and bipolar resistive switching behaviors, respectively.\",\"PeriodicalId\":6402,\"journal\":{\"name\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2012.6243333\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243333","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Co-existed unipolar and bipolar resistive switching effect of HfOx-based RRAM
Both unipolar and bipolar resistive switching behaviors are demonstrated and investigated in the TaTiN/HfOx/Pt structured RRAM devices. A physical model based on the recombination among the electron-depleted oxygen vacancies (VO2+) and the oxygen ions (O2-) released from the TaTiN electrode is proposed to clarify the co-existed bipolar and unipolar resistive switching effect. In the proposed physical model, Joule heating controlled O2- decomposition and electric-field controlled O2- drift dominate the unipolar and bipolar resistive switching behaviors, respectively.
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