SOI MOSFET单孔光电寿命评估

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243297

Wei Du, D. Putranto, H. Satoh, A. Ono, P. Priambodo, D. Hartanto, H. Inokawa

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引用次数: 0

摘要

提出了一种评估SOI MOSFET单孔寿命的光电方法，该方法采用连续光照射器件，分析了数字化漏极电流的直方图。结果表明，空穴数越少，横向电场越大，空穴寿命越长。

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Optoelectrical lifetime evaluation of single holes in SOI MOSFET

Optoelectrical method to evaluate the lifetime of single holes in SOI MOSFET is presented, in which the device is illuminated with a continuous light and the histograms of the digitized drain current is analyzed. It was found that smaller number of holes and the higher transverse electric field greatly enhance the hole lifetime.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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