Cu/SiO2/TiN RRAM器件的自适应单极电阻开关及其机制

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243356

D. Yu, L. Liu, P. Huang, F. Zhang, B. Chen, B. Gao, Y. Hou, D. Han, Y. Wang, J. Kang, X. Zhang

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引用次数: 4

摘要

制备并研究了CMOS兼容Cu/SiO2/ tin基阻性随机存取存储器(RRAM)。观察到独特的自顺应单极电阻开关(RS)，以及良好的电阻状态保持和均匀性。提出了考虑热效应和电效应的铜导电丝形成和断裂的物理模型，并通过实验进行了验证。

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Self- compliance unipolar resistive switching and mechanism of Cu/SiO2/TiN RRAM devices

CMOS compatible Cu/SiO2/TiN-based resistive random access memory (RRAM) was fabricated and investigated. Unique self-compliance unipolar resistive switching (RS) was observed, as well as good retention and uniformity of resistance states. A physical model based on formation and rupture of Cu conductive filament (CF) is proposed, considering both thermal and electrical effect, and verified by experiments.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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