金属带上低成本柔性单晶类砷化镓薄膜太阳能电池的研究

S. Pouladi, M. Rathi, P. Dutta, S. Oh, D. Khatiwada, Yao Yao, Ying Gao, Sicong Sun, Yongkuan Li, M. Asadirad, Shahab Shervin, Jie Chen, V. Selvamanickam, J. Ryou
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引用次数: 0

摘要

III-V型化合物半导体是具有最高转换效率的最佳光伏太阳能电池(SC)材料。然而,它们价格昂贵,缺乏机械灵活性和制造可扩展性。我们开发了一种新的光伏平台,将几乎单晶的III-V薄膜直接沉积在廉价的多晶金属带上。在该平台上,柔性单结SC的效率可达7.5%,但在晶界处,SC的开路电压受到少数载流子复合的影响。对SC器件进行了大面积钝化处理,使Voc增加了350mV以上。
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Toward Higher Efficiency of Low-Cost Flexible Single-Crystal-Like GaAs Thin Film Solar Cells on Metal Tapes
III-V compound semiconductors are the best photovoltaic solar cell (SC) materials for highest conversion efficiencies. However, they are expensive and lack in mechanical flexibility and manufacturing scalability. We developed a new PV platform where nearly single-crystalline III-V thin films were directly deposited on inexpensive polycrystalline metal tapes. While a promising efficiency of ~7.5% was achieved for flexible single junction SCs on this platform, the open circuit voltage of SC suffers from minority carrier recombination at grainboundary sites according to a simulation study. A bulk passivation treatment is conducted on the SC devices which resulted in more than 350mV increase for Voc.
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