{"title":"陡坡次阈值pn体系soi场效应管的精确瞬态机理及关断时减小漏电流的新结构","authors":"Takayuki Mori, J. Ida, Hiroki Endo, Y. Arai","doi":"10.1109/SISPAD.2019.8870519","DOIUrl":null,"url":null,"abstract":"In this study, the precise transient mechanism of the super-steep subthreshold slope PN-body-tied (PNBT) silicon on insulator field-effect transistor (SOI-FET) is clarified by using technology computer-aided design. We found out that the operation mechanism differs between the turn-on and turn-off. Additionally, a new PNBT SOI-FET structure with a second gate for the high-speed operation is proposed and we showed that the new structure can reduce the leakage current upon the turn-off.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"39 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Precise Transient Mechanism of Steep Subthreshold Slope PN-Body-Tied SOI-FET and Proposal of a New Structure for Reducing Leakage Current upon Turn-off\",\"authors\":\"Takayuki Mori, J. Ida, Hiroki Endo, Y. Arai\",\"doi\":\"10.1109/SISPAD.2019.8870519\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, the precise transient mechanism of the super-steep subthreshold slope PN-body-tied (PNBT) silicon on insulator field-effect transistor (SOI-FET) is clarified by using technology computer-aided design. We found out that the operation mechanism differs between the turn-on and turn-off. Additionally, a new PNBT SOI-FET structure with a second gate for the high-speed operation is proposed and we showed that the new structure can reduce the leakage current upon the turn-off.\",\"PeriodicalId\":6755,\"journal\":{\"name\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"39 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2019.8870519\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870519","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Precise Transient Mechanism of Steep Subthreshold Slope PN-Body-Tied SOI-FET and Proposal of a New Structure for Reducing Leakage Current upon Turn-off
In this study, the precise transient mechanism of the super-steep subthreshold slope PN-body-tied (PNBT) silicon on insulator field-effect transistor (SOI-FET) is clarified by using technology computer-aided design. We found out that the operation mechanism differs between the turn-on and turn-off. Additionally, a new PNBT SOI-FET structure with a second gate for the high-speed operation is proposed and we showed that the new structure can reduce the leakage current upon the turn-off.
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