B. Marchand, D. Blachier, C. Leroux, G. Ghibaudo, F. Balestra, G. Reimbold
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Generation of hot carriers by secondary impact ionization in deep submicron devices: model and light emission characterization
This paper gives a deep insight on the secondary impact ionization phenomenon. A simple and accurate analytical model of the gate current in deep sub-micron MOS devices is presented, taking into account the substrate bias and the temperature influence. Also for the first time, the related light emission is analyzed. The spectrum analysis is shown to allow individual observation of both first and secondary impact ionizations. Secondary ionization is shown to correlate to substrate current. The photon origin is discussed.
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