双向选择器件特性超薄(<3nm) TiO2层用于3D垂直可堆叠ReRAM应用

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243332

J. Woo, Jubong Park, Jungho Shin, G. Choi, Seonghyun Kim, Wootae Lee, Sangsu Park, Daeseok Lee, E. Cha, H. Hwang

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引用次数: 1

摘要

提出了超薄层双向选择器件特性的可行性。我们利用局部导电路径作为虚拟电极来研究器件在极尺度区域的性能。通过在氧化物中“成形”和“复位”等电学方法，实现了虚拟电极/亚3nm厚TiO2/虚拟电极结构。所测器件的电流-电压特性表现出均匀的双向选择行为，具有高选择性(~105)，表明了高电流密度(>;106A/cm2)的可行性。

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Bidirectional selection device characteristics of ultra-thin (<3nm) TiO2 layer for 3D vertically stackable ReRAM application

We propose the feasibility of bidirectional selection device characteristics in ultrathin (<;3nm) TiO₂ layer. We utilized the localized conducting path as virtual electrode to investigate device property at extremely scaled area. By using electrical method such as “forming” and “reset” processes in oxide, virtual electrode/sub-3nm-thick TiO₂/virtual electrode structure was achieved. The measured current-voltage characteristics of fabricated device exhibited uniform bidirectional selection behavior with a high selectivity (~10⁵) and showed the feasibility of high current density (>;10⁶A/cm²).

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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