用于射频应用的高压LDMOS紧凑型模型

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609308

M. Willemsen, R. Van Langevelde

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引用次数: 9

摘要

我们提出了一个RF-LDMOS晶体管的紧凑模型。该模型基于横向电场的连续描述，并包含漂移区局部横向耗尽和速度饱和的物理现象。该模型已通过设备仿真和测量得到验证

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High-voltage LDMOS compact model for RF applications

We present a compact model for RF-LDMOS transistors. The model is based on a continuous description of the lateral electric field, and contains the physical phenomena of partial lateral depletion and velocity saturation in the drift region. The model has been validated with device simulations and measurements

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来源期刊

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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