一种基于电荷再分配技术的16位、250ksps连续逼近寄存器ADC

Huang Xiaozong, Zhang Jing, Gao Weiqi, Shi Jiangang, W. Hui
{"title":"一种基于电荷再分配技术的16位、250ksps连续逼近寄存器ADC","authors":"Huang Xiaozong, Zhang Jing, Gao Weiqi, Shi Jiangang, W. Hui","doi":"10.1109/EDSSC.2011.6117627","DOIUrl":null,"url":null,"abstract":"This paper presents a 16-bit 250ksps successive approximation register analog-to-digital converter (SAR-ADC) based on the charge-redistribution technique. The ADC contains a charge-redistribution DAC, a high precision internal voltage reference, a low offset comparator and a serial data interface. The split capacitor array was used to save the area of the chip and improve the speed and accuracy of the ADC. The electrical programming fuse (Efuse) which can be demonstrated after package without any extra pads or special equipments required is employed to optimize the performance of reference voltage and internal DAC. Measured at +5V supply and 250ksps, and consumes current of less than 17mA. The experimental measurement results indicate that an SNR of 88.8 dB, typical DNL of 0.6LSB and INL of 2.5LSB were achieved. The prototype was fabricated in a commercial 2P3M CMOS technology with the feature size of 0.6µm and occupies an active area of 4.2mm∗5.2 mm.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 16-bit, 250ksps successive approximation register ADC based on the charge-redistribution technique\",\"authors\":\"Huang Xiaozong, Zhang Jing, Gao Weiqi, Shi Jiangang, W. Hui\",\"doi\":\"10.1109/EDSSC.2011.6117627\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 16-bit 250ksps successive approximation register analog-to-digital converter (SAR-ADC) based on the charge-redistribution technique. The ADC contains a charge-redistribution DAC, a high precision internal voltage reference, a low offset comparator and a serial data interface. The split capacitor array was used to save the area of the chip and improve the speed and accuracy of the ADC. The electrical programming fuse (Efuse) which can be demonstrated after package without any extra pads or special equipments required is employed to optimize the performance of reference voltage and internal DAC. Measured at +5V supply and 250ksps, and consumes current of less than 17mA. The experimental measurement results indicate that an SNR of 88.8 dB, typical DNL of 0.6LSB and INL of 2.5LSB were achieved. The prototype was fabricated in a commercial 2P3M CMOS technology with the feature size of 0.6µm and occupies an active area of 4.2mm∗5.2 mm.\",\"PeriodicalId\":6363,\"journal\":{\"name\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2011.6117627\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117627","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

提出了一种基于电荷再分配技术的16位250ksps逐次逼近寄存器模数转换器(SAR-ADC)。ADC包含一个电荷再分配DAC,一个高精度的内部电压基准,一个低偏移比较器和一个串行数据接口。采用分体式电容阵列,节省了芯片面积,提高了ADC的速度和精度。为了优化参考电压和内部DAC的性能,采用了可在封装后演示的电气编程保险丝(Efuse),无需额外的衬垫或特殊设备。在+5V电源和250ksps下测量,消耗电流小于17mA。实验测量结果表明,该系统的信噪比为88.8 dB, DNL为0.6LSB, INL为2.5LSB。该原型采用商用2P3M CMOS技术制造,特征尺寸为0.6µm,有效面积为4.2mm * 5.2 mm。
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A 16-bit, 250ksps successive approximation register ADC based on the charge-redistribution technique
This paper presents a 16-bit 250ksps successive approximation register analog-to-digital converter (SAR-ADC) based on the charge-redistribution technique. The ADC contains a charge-redistribution DAC, a high precision internal voltage reference, a low offset comparator and a serial data interface. The split capacitor array was used to save the area of the chip and improve the speed and accuracy of the ADC. The electrical programming fuse (Efuse) which can be demonstrated after package without any extra pads or special equipments required is employed to optimize the performance of reference voltage and internal DAC. Measured at +5V supply and 250ksps, and consumes current of less than 17mA. The experimental measurement results indicate that an SNR of 88.8 dB, typical DNL of 0.6LSB and INL of 2.5LSB were achieved. The prototype was fabricated in a commercial 2P3M CMOS technology with the feature size of 0.6µm and occupies an active area of 4.2mm∗5.2 mm.
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