Pt溅射过程中气体成分对CoFeB薄膜结构和磁性能的影响

IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Magnetics Letters Pub Date : 2022-12-13 DOI:10.1109/LMAG.2022.3225742
Hans T. Nembach;Justin M. Shaw;Chloe S. Taylor;Daniel B. Gopman
{"title":"Pt溅射过程中气体成分对CoFeB薄膜结构和磁性能的影响","authors":"Hans T. Nembach;Justin M. Shaw;Chloe S. Taylor;Daniel B. Gopman","doi":"10.1109/LMAG.2022.3225742","DOIUrl":null,"url":null,"abstract":"Ultrathin Ta/CoFeB/Pt trilayer structures are relevant to a wide range of spintronic applications, from magnetic tunnel junctions to skyrmionics devices. Controlling the perpendicular magnetic anisotropy, Gilbert damping, and Dzyaloshinskii–Moriya interaction (DMI) in the CoFeB layer is key for these applications. We examine the role of sputter gas composition during the Pt overlayer deposition of a Ta/CoFeB/Pt trilayer in Ar, Kr, and Xe working gas environments during direct current magnetron sputtering. The decreasing density of the Pt layer (from 21 to 15 g/cm\n<sup>3</sup>\n) was apparent in specular X-ray reflectivity measurements of the trilayer films when increasing the molecular weight of the sputtering gas from Ar to Kr to Xe. Significant effects on the Gilbert damping and the interfacial DMI energy were observed, with increases in the damping from 0.037(1) to 0.042(1) to 0.048(1), and reductions in the interfacial DMI from 0.47(4) mJ/m\n<sup>2</sup>\n to 0.45(5) mJ/m\n<sup>2</sup>\n to 0.39(4) mJ/m\n<sup>2</sup>\n. The ability to control the perpendicular magnetization and DMI strength of these materials through judicious interfacial control is a means toward magnetic devices with better stability at smaller lateral dimensions, the key to device scaling for spintronic device arrays.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":null,"pages":null},"PeriodicalIF":1.1000,"publicationDate":"2022-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10161395/pdf/nihms-1880596.pdf","citationCount":"0","resultStr":"{\"title\":\"Effect of Gas Composition During Pt Sputtering on Structural and Magnetic Properties of CoFeB Thin Films\",\"authors\":\"Hans T. Nembach;Justin M. Shaw;Chloe S. Taylor;Daniel B. Gopman\",\"doi\":\"10.1109/LMAG.2022.3225742\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ultrathin Ta/CoFeB/Pt trilayer structures are relevant to a wide range of spintronic applications, from magnetic tunnel junctions to skyrmionics devices. Controlling the perpendicular magnetic anisotropy, Gilbert damping, and Dzyaloshinskii–Moriya interaction (DMI) in the CoFeB layer is key for these applications. We examine the role of sputter gas composition during the Pt overlayer deposition of a Ta/CoFeB/Pt trilayer in Ar, Kr, and Xe working gas environments during direct current magnetron sputtering. The decreasing density of the Pt layer (from 21 to 15 g/cm\\n<sup>3</sup>\\n) was apparent in specular X-ray reflectivity measurements of the trilayer films when increasing the molecular weight of the sputtering gas from Ar to Kr to Xe. Significant effects on the Gilbert damping and the interfacial DMI energy were observed, with increases in the damping from 0.037(1) to 0.042(1) to 0.048(1), and reductions in the interfacial DMI from 0.47(4) mJ/m\\n<sup>2</sup>\\n to 0.45(5) mJ/m\\n<sup>2</sup>\\n to 0.39(4) mJ/m\\n<sup>2</sup>\\n. The ability to control the perpendicular magnetization and DMI strength of these materials through judicious interfacial control is a means toward magnetic devices with better stability at smaller lateral dimensions, the key to device scaling for spintronic device arrays.\",\"PeriodicalId\":13040,\"journal\":{\"name\":\"IEEE Magnetics Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.1000,\"publicationDate\":\"2022-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10161395/pdf/nihms-1880596.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Magnetics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/9983810/\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Magnetics Letters","FirstCategoryId":"101","ListUrlMain":"https://ieeexplore.ieee.org/document/9983810/","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

超薄Ta/CoFeB/Pt三层结构与广泛的自旋电子应用有关,从磁性隧道结到skyrmionics器件。控制CoFeB层中的垂直磁各向异性、Gilbert阻尼和Dzyaloshinskii–Moriya相互作用(DMI)是这些应用的关键。我们研究了在直流磁控溅射过程中,在Ar、Kr和Xe工作气体环境中,在Ta/CoFeB/Pt三层的Pt覆盖层沉积过程中溅射气体成分的作用。当溅射气体的分子量从Ar增加到Kr再增加到Xe时,Pt层的密度降低(从21到15g/cm3)在三层膜的镜面X射线反射率测量中是明显的。观察到对吉尔伯特阻尼和界面DMI能量的显著影响,阻尼从0.037(1)增加到0.042(1)到0.048(1),界面DMI从0.47(4)mJ/m2减少到0.45(5)mJ/m2-0.39(4)m J/m2。通过明智的界面控制来控制这些材料的垂直磁化和DMI强度的能力是实现在较小横向尺寸下具有更好稳定性的磁性器件的一种手段,这是自旋电子器件阵列器件缩放的关键。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Effect of Gas Composition During Pt Sputtering on Structural and Magnetic Properties of CoFeB Thin Films
Ultrathin Ta/CoFeB/Pt trilayer structures are relevant to a wide range of spintronic applications, from magnetic tunnel junctions to skyrmionics devices. Controlling the perpendicular magnetic anisotropy, Gilbert damping, and Dzyaloshinskii–Moriya interaction (DMI) in the CoFeB layer is key for these applications. We examine the role of sputter gas composition during the Pt overlayer deposition of a Ta/CoFeB/Pt trilayer in Ar, Kr, and Xe working gas environments during direct current magnetron sputtering. The decreasing density of the Pt layer (from 21 to 15 g/cm 3 ) was apparent in specular X-ray reflectivity measurements of the trilayer films when increasing the molecular weight of the sputtering gas from Ar to Kr to Xe. Significant effects on the Gilbert damping and the interfacial DMI energy were observed, with increases in the damping from 0.037(1) to 0.042(1) to 0.048(1), and reductions in the interfacial DMI from 0.47(4) mJ/m 2 to 0.45(5) mJ/m 2 to 0.39(4) mJ/m 2 . The ability to control the perpendicular magnetization and DMI strength of these materials through judicious interfacial control is a means toward magnetic devices with better stability at smaller lateral dimensions, the key to device scaling for spintronic device arrays.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Magnetics Letters
IEEE Magnetics Letters PHYSICS, APPLIED-
CiteScore
2.40
自引率
0.00%
发文量
37
期刊介绍: IEEE Magnetics Letters is a peer-reviewed, archival journal covering the physics and engineering of magnetism, magnetic materials, applied magnetics, design and application of magnetic devices, bio-magnetics, magneto-electronics, and spin electronics. IEEE Magnetics Letters publishes short, scholarly articles of substantial current interest. IEEE Magnetics Letters is a hybrid Open Access (OA) journal. For a fee, authors have the option making their articles freely available to all, including non-subscribers. OA articles are identified as Open Access.
期刊最新文献
Role of Shape Ellipticity on Dipole-exchange Spin Waves in Ferromagnetic Nanorings Magnetic and dielectric properties of CoFeB multi-layer thin films with oxide capping layer Effect of Powder Particle Surface Treatment on DC Magnetic Properties of Compacted Iron Cores Exploring the Structural and Magnetic Properties of Cu-Rich CuxMn3−xO4 Spinels for Advanced Magnetic Refrigeration at Liquid Nitrogen Temperatures A Variable Stiffness Methodology to Extend Travel Range of Micro Electromagnetic Actuators
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1