A.H. Izhal, T. Ushinaga, T. Sawada, M. Homma, Y. Maeda, S. Kawahito
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引用次数: 53
Abstract
This paper presents a new type of CMOS time-of-flight (TOF) range image sensor using single layer gates on field oxide structure for photo conversion and charge transfer. An additional process step to create an n-type buried layer is used. This simple structure allows the realization of a high resolution array with 15 times 15 mum2 pixels in standard CMOS process. To minimize the influence of background light, the proposed pixel structure has charge draining gates. A small duty cycle optical pulse is also used for this purpose. The TOF sensor chip was successfully implemented and tested
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