Device level vacuum packaged micromachined infrared detectors on flexible substrates

A. Mahmood, D. Butler, Z. Çelik-Butler
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引用次数: 1

Abstract

This paper presents progress made in making device-level vacuum-packaged microbolometers as infrared detectors on flexible substrates. Polyimide PI5878G serves as the flexible substrate and semiconducting yttrium barium copper oxide (YBCO) is used as the bolometric material. Finite element analysis is used to design a vacuum cavity housing a microbolometer. Suitable materials are selected for the microcavity fabrication based on results of the computer simulations. During fabrication, sacrificial polyimide around the detector facilitates the formation of a vacuum microcavity with an optical window. Micromachining is carried out through trenches in the microcavity wall. After isolating the microbolometer from the ambient, the trenches are sealed shut by sputtering in vacuum. The fabricated devices are characterized for responsivity and detectivity. At a bias voltage of 10 V, 40-40mu m2 devices exhibited a current responsivity of 6.13 timesl0-5 A/W to a broad-band infrared radiation modulated at 5 Hz. A maximum detectivity of 1.76times105 cm-Hz1/2/W was measured. A relatively low thermal conductance of 3.36times10-6 W/K was measured implying good thermal isolation of the bolometers and therefore an intact vacuum cavity
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柔性基板上的器件级真空封装微机械红外探测器
本文介绍了在柔性衬底上制备器件级真空封装微辐射热计作为红外探测器的研究进展。聚酰亚胺PI5878G用作柔性衬底,半导体钇钡铜氧化物(YBCO)用作热测量材料。采用有限元分析方法设计了微辐射热计的真空腔体。根据计算机模拟的结果,选择了合适的材料来制作微腔。在制造过程中,牺牲聚酰亚胺周围的探测器有利于形成真空微腔与光学窗口。微加工是通过微腔壁上的沟槽进行的。将微辐射热计与周围环境隔离后,在真空中通过溅射封闭沟槽。所制备的器件具有响应性和探测性的特点。在偏置电压为10 V时,40-40 μ m2器件对5 Hz调制的宽带红外辐射的电流响应率为6.13倍(10 -5 a /W)。测得最大检出率为1.76倍(105 cm-Hz1/2/W)。测量到的相对较低的热导率为3.36倍10-6 W/K,这意味着热计具有良好的热隔离性,因此具有完整的真空腔
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Batch fabrication of micro-coils for MR spectroscopy on silicon Iridium oxide reference electrodes for neurochemical sensing with MEMS microelectrode arrays Emissions sensors for high temperature fuel cell applications Device level vacuum packaged micromachined infrared detectors on flexible substrates A CMOS time-of-flight range image sensor with gates on field oxide structure
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