{"title":"Analytical threshold voltage model for short channel n/sup +/-p/sup +/ double-gate SOI MOSFETs","authors":"K. Suzuki, Y. Tosaka, T. Sugii","doi":"10.1109/SOI.1995.526464","DOIUrl":null,"url":null,"abstract":"Previously, we proposed n/sup +/-p/sup +/ double-gate SOI MOSFETs, and fabricated this device, and demonstrated high-speed, low-power performance with a gate length L/sub G/ of 0.2 /spl mu/m. In this paper, we have derived a threshold voltage model V/sub th/ for short channel devices to predict how far this device can be scaled. Using this model, which agrees with numerical data, we evaluated V/sub th/ lowering /spl Delta/V/sub th/ with decreasing the gate length L/sub G/, and showed that we can design a 0.05 /spl mu/m-L/sub G/ device with /spl Delta/V/sub th/ of 25 mV and an S-swing of 65 mV/decade.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"54","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526464","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 54
Abstract
Previously, we proposed n/sup +/-p/sup +/ double-gate SOI MOSFETs, and fabricated this device, and demonstrated high-speed, low-power performance with a gate length L/sub G/ of 0.2 /spl mu/m. In this paper, we have derived a threshold voltage model V/sub th/ for short channel devices to predict how far this device can be scaled. Using this model, which agrees with numerical data, we evaluated V/sub th/ lowering /spl Delta/V/sub th/ with decreasing the gate length L/sub G/, and showed that we can design a 0.05 /spl mu/m-L/sub G/ device with /spl Delta/V/sub th/ of 25 mV and an S-swing of 65 mV/decade.
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