{"title":"An unified GSMBE growth model for GaInAsP on InP and GaAs","authors":"Jin-Shung Liu, Tsuen-Lin Lee, Hao-Hsiung Lin","doi":"10.1109/ICIPRM.1996.492301","DOIUrl":null,"url":null,"abstract":"A GaInAsP GSMBE growth model considering an intermediate state is presented. This model is very simple and needs only two fitting parameters, k/sub In/ and k/sub Ga/, which are determined from the experimental results of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ on InP (0<x<0.47 and 0<y<1) and In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ on GaAs (0.51<x<1 and 0<y<1). At a growth temperature of 480/spl deg/C, they are 27.5 and 2.75, respectively. Their temperature dependency, i.e., activation energies are -27.5 and -457 meV, respectively. The average lattice mismatch difference between the theoretical and experimental results of grown epilayers is less than 7/spl times/10/sup -4/.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"68 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492301","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A GaInAsP GSMBE growth model considering an intermediate state is presented. This model is very simple and needs only two fitting parameters, k/sub In/ and k/sub Ga/, which are determined from the experimental results of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ on InP (0
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