T. Yamazaki, M. Hirakawa, T. Nakayama, H. Murakami
{"title":"Development of porous silica ultra low-k films for 32 nm-node interconnects and beyond","authors":"T. Yamazaki, M. Hirakawa, T. Nakayama, H. Murakami","doi":"10.1109/IITC.2009.5090358","DOIUrl":null,"url":null,"abstract":"Porous silica spin-on dielectrics (SOD) films with low dielectric constant (k ∼ 2.0), high Young's modulus (E ∼ 7.5 GPa), and small pores (∼ 0.2 nm) were obtained only with ultraviolet (UV) curing within 1min at 350 °C but without hydrophobic treatment process. Optimized UV curing condition and composition of precursor solution can give the low-k film applicable to 32 nm-node interconnect technology and beyond.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"31 8","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090358","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Porous silica spin-on dielectrics (SOD) films with low dielectric constant (k ∼ 2.0), high Young's modulus (E ∼ 7.5 GPa), and small pores (∼ 0.2 nm) were obtained only with ultraviolet (UV) curing within 1min at 350 °C but without hydrophobic treatment process. Optimized UV curing condition and composition of precursor solution can give the low-k film applicable to 32 nm-node interconnect technology and beyond.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
