Low Angle Annular Dark Field Scanning Transmission Electron Microscopy Analysis of Phase Change Material

J. Li, K. Brew, K. Cheng, V. Chan, N. Arnold, A. Gasasira, R. Pujari, J. Demarest, M. Iwatake, L. Tierney, O. Ogundipe, K. Toole, N. Li
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引用次数: 1

Abstract

The continuously growing demands in high-density memories drive the rapid development of advanced memory technologies. In this work, we investigate the mushroom type PCM cells based on Ge2Sb2Te5 at nanoscale by low angle annular dark field (LAADF) STEM imaging technique as well as energy dispersive X-ray spectroscopy (EDX) to study the changes in microstructure and elemental distributions in PCM mushroom cells before and after SET and RESET conditions. We describe the microscope settings used for LAADF image formation to reveal the amorphous dome in RESET device and discuss the application example in failure analysis of PCM test device.
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相变材料的低角环形暗场扫描透射电镜分析
高密度存储器的需求不断增长,推动了先进存储器技术的快速发展。本文采用低角环形暗场(LAADF) STEM成像技术和能量色散x射线能谱(EDX)技术,对基于Ge2Sb2Te5的蘑菇型PCM细胞进行了纳米尺度的研究,研究了SET和RESET条件前后PCM蘑菇细胞的微观结构和元素分布的变化。介绍了在RESET器件中用于LAADF成像的显微镜设置,并讨论了在PCM测试器件失效分析中的应用实例。
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