T. Tsukamoto, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, Y. Suda
{"title":"Effects of DC sputtering conditions on formation of Ge layers on Si substrates by sputter epitaxy method","authors":"T. Tsukamoto, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, Y. Suda","doi":"10.1109/ISTDM.2014.6874675","DOIUrl":null,"url":null,"abstract":"The formation of Ge layers on the Si (001) substrates with 3.5 Ω cm resistivity by sputter epitaxy method has been investigated. Flat Ge layers on the Si substrates are obtained by adjusting the DC sputtering conditions. High DC power sputtering modifies the surface morphology and leads to the formation of flat Ge layers.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"48 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874675","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The formation of Ge layers on the Si (001) substrates with 3.5 Ω cm resistivity by sputter epitaxy method has been investigated. Flat Ge layers on the Si substrates are obtained by adjusting the DC sputtering conditions. High DC power sputtering modifies the surface morphology and leads to the formation of flat Ge layers.
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