M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, S. Zaima
{"title":"Low temperature growth of SiSn polycrystals with high Sn contents on insulating layers","authors":"M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, S. Zaima","doi":"10.1109/ISTDM.2014.6874680","DOIUrl":null,"url":null,"abstract":"Comparative study between the poly-Si and the poly-SiSn layers reveals that the Sn incorporation is effective to decrease the crystallization temperature. Also, we found that the formation of SiSn polycrystal with a substitutional Sn content of around 30%, which is expected as a direct transition semiconductor, becomes possible on SiO2 at a low temperature growth of 150°C.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"249 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874680","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Comparative study between the poly-Si and the poly-SiSn layers reveals that the Sn incorporation is effective to decrease the crystallization temperature. Also, we found that the formation of SiSn polycrystal with a substitutional Sn content of around 30%, which is expected as a direct transition semiconductor, becomes possible on SiO2 at a low temperature growth of 150°C.
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