A study of SiN cap NH/sub 3/ plasma pre-treatment process on the PID, EM, GOI performance and BEOL defectivity in Cu dual damascene technology

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309924

C. Ang, W. Lu, A. Yap, L. C. Goh, L. Goh, Y. K. Lim, C. Chua, L. Ko, T. Tan, S. Toh, L. Hsia

引用次数: 1

Abstract

The influence of the SiN cap-layer NH/sub 3/ pre-treatment process on the electromigration (EM), plasma-induced damage (PID), gate oxide integrity (GOI) and BEOL defectivity has been studied. A noteworthy trade-off between EM, PID, GOI performance, and BEOL defectivity is revealed. On one hand, aggressive NH/sub 3/ pre-treatment process yields improved EM lifetime and PID. On the other hand, the process may provoke Cu hillock and IMD blister defects, as well as GOI yield failure if the treatment is over-aggressive. These disparate observations have been satisfactorily explained using RF plasma-induced heating mechanism in the underlying Cu and IMD. This paper also shows the need to adjust the NH/sub 3/ pretreatment process to meet the overall yield, reliability and manufacturability requirements.

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sincap NH/sub - 3/等离子体预处理工艺对Cu双氧化工艺中PID、EM、GOI性能和BEOL缺陷的影响研究

研究了SiN帽层NH/ sub3 /预处理工艺对电迁移(EM)、等离子体损伤(PID)、栅极氧化物完整性(GOI)和BEOL缺陷的影响。EM、PID、GOI性能和BEOL缺陷之间值得注意的权衡。一方面，积极的NH/sub - 3/预处理工艺提高了EM寿命和PID。另一方面，如果处理过于激进，该过程可能会引起Cu丘和IMD水泡缺陷，以及GOI屈服失败。这些不同的观察结果已经用射频等离子体诱导的加热机制在潜在的Cu和IMD中得到了满意的解释。本文还表明，为满足整体良率、可靠性和可制造性要求，需要对NH/sub /预处理工艺进行调整。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

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