Advanced germanium MOSFET technologies with high-/spl kappa/ gate dielectrics and shallow junctions

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309955
C. O. Chui, K. Saraswat
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引用次数: 6

Abstract

Various advanced germanium (Ge) metal-oxide-semiconductor field-effect transistor (MOSFET) technologies with high-permittivity (high-/spl kappa/) gate dielectrics and shallow junctions have been demonstrated. Numerous novel Ge technologies on surface cleaning, gate dielectric, and dopant incorporation are presented In addition, we disclose an innovative self-aligned gate-last fabrication process not only to demonstrate functional Ge MOSFETs, but also to provide a vehicle to characterize many novel material integration schemes.
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先进的锗MOSFET技术，具有高/spl kappa/栅极电介质和浅结
各种先进的锗(Ge)金属氧化物半导体场效应晶体管(MOSFET)技术具有高介电常数(高/spl kappa/)栅极介质和浅结。此外，我们披露了一种创新的自对准栅末制造工艺，不仅展示了功能性的Ge mosfet，而且还提供了表征许多新型材料集成方案的载体。
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2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)
2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)
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