{"title":"Monolithically integrated 40-Gb/s InP/InGaAs PIN/HBT optical receiver module","authors":"M. Bitter, R. Bauknecht, W. Hunziker, H. Melchior","doi":"10.1109/ICIPRM.1999.773713","DOIUrl":null,"url":null,"abstract":"A fully packaged 40 Gb/s optical receiver module based on monolithic integration of pin photodiodes and single-heterojunction bipolar transistors (HBT) in the InP/InGaAs material system is presented. Combined with an electrical broad-band mounting technique the optical receiver module achieved an overall conversion gain of 48 V/W and showed clearly open eyes at a data-rate of 40 Gb/s and a wavelength of 1550 nm.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"153 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773713","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A fully packaged 40 Gb/s optical receiver module based on monolithic integration of pin photodiodes and single-heterojunction bipolar transistors (HBT) in the InP/InGaAs material system is presented. Combined with an electrical broad-band mounting technique the optical receiver module achieved an overall conversion gain of 48 V/W and showed clearly open eyes at a data-rate of 40 Gb/s and a wavelength of 1550 nm.
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