Pub Date : 1999-05-20DOI: 10.1109/ICIPRM.1999.773733
A. Shakouri, C. Labounty, P. Abraham, J. Piprek, J. Bowers
Thermoelectric coolers are important elements of many optoelectronic systems. Current commercial coolers are based on non-conventional semiconductors such as BiTe. In this paper we analyze the prospect of InP based material to fabricate coolers that can be integrated with optoelectronic components. Experimental results are shown where thermionic emission current in InGaAs/InGaAsP heterostructures is used to enhance the cooling power of conventional bulk material. About one degree cooling over 1 /spl mu/m thick barrier is observed (i.e. a cooling power of 200-300 W/cm/sup 2/). Calculations for InGaAs/InAlAs superlattices show that single stage cooling by as much as 20-30 degrees should be possible.
{"title":"InP-based thermionic coolers","authors":"A. Shakouri, C. Labounty, P. Abraham, J. Piprek, J. Bowers","doi":"10.1109/ICIPRM.1999.773733","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773733","url":null,"abstract":"Thermoelectric coolers are important elements of many optoelectronic systems. Current commercial coolers are based on non-conventional semiconductors such as BiTe. In this paper we analyze the prospect of InP based material to fabricate coolers that can be integrated with optoelectronic components. Experimental results are shown where thermionic emission current in InGaAs/InGaAsP heterostructures is used to enhance the cooling power of conventional bulk material. About one degree cooling over 1 /spl mu/m thick barrier is observed (i.e. a cooling power of 200-300 W/cm/sup 2/). Calculations for InGaAs/InAlAs superlattices show that single stage cooling by as much as 20-30 degrees should be possible.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123935300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773766
A. Hubener, J. Schobel, A. Mallwitz, W. Kowalsky
We investigate the growth of the new III-V semiconductor TlGaP on GaAs substrates. TlGaP is a very interesting material for a wide range of emission wavelengths. X-ray diffraction measurements indicate the growth of lattice-matched TlGaP on GaAs. The photoluminescence spectra show room-temperature emission at wavelengths around 1.3 /spl mu/m, which manifests good crystal quality. The electroluminescence spectrum of the first TlGaP LED is in good agreement with the photoluminescence measurements.
{"title":"1.3 /spl mu/m emission of TlGaP-LEDs grown on GaAs","authors":"A. Hubener, J. Schobel, A. Mallwitz, W. Kowalsky","doi":"10.1109/ICIPRM.1999.773766","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773766","url":null,"abstract":"We investigate the growth of the new III-V semiconductor TlGaP on GaAs substrates. TlGaP is a very interesting material for a wide range of emission wavelengths. X-ray diffraction measurements indicate the growth of lattice-matched TlGaP on GaAs. The photoluminescence spectra show room-temperature emission at wavelengths around 1.3 /spl mu/m, which manifests good crystal quality. The electroluminescence spectrum of the first TlGaP LED is in good agreement with the photoluminescence measurements.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123154052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773695
Y.C. Chen, P. Chin, D. Ingram, R. Lai, R. Grundbacher, M. Barsky, T. Block, M. Wojtowicz, L. Tran, V. Medvedev, H. Yen, D. Streit, A. Brown
We have developed composite-channel InP-InGaAs HEMTs for W-band high power amplifier applications. The optimized 0.15 /spl mu/m T-gate device demonstrated state-of-the-art g/sub m/-I/sub max/ combination. It also showed a 1.5 V improvement in on-state and off-state breakdown over the conventional InP HEMT without degrading the RF performance. A two-stage MMIC power amplifier built on this device delivered 25 dBm output power with 17 dB linear gain at 94 GHz as measured on wafer. To our knowledge, this is the first demonstration of composite-channel HEMT at 94 GHz with excellent power performance.
{"title":"Composite-channel InP HEMT for W-band power amplifiers","authors":"Y.C. Chen, P. Chin, D. Ingram, R. Lai, R. Grundbacher, M. Barsky, T. Block, M. Wojtowicz, L. Tran, V. Medvedev, H. Yen, D. Streit, A. Brown","doi":"10.1109/ICIPRM.1999.773695","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773695","url":null,"abstract":"We have developed composite-channel InP-InGaAs HEMTs for W-band high power amplifier applications. The optimized 0.15 /spl mu/m T-gate device demonstrated state-of-the-art g/sub m/-I/sub max/ combination. It also showed a 1.5 V improvement in on-state and off-state breakdown over the conventional InP HEMT without degrading the RF performance. A two-stage MMIC power amplifier built on this device delivered 25 dBm output power with 17 dB linear gain at 94 GHz as measured on wafer. To our knowledge, this is the first demonstration of composite-channel HEMT at 94 GHz with excellent power performance.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"305 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116796424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773674
N. Iwai, T. Mukaihara, N. Yamanaka, M. Itoh, S. Arakawa, H. Shimizu, A. Kasukawa
A 1.3 /spl mu/m Al-oxide confined inner stripe laser on p-InP substrate (PACIS) has been demonstrated for low cost laser array application. First, we have investigated the oxidation rate of Al/sub x/In/sub 1-x/As layer grown on InP substrate. The optimum conditions were found to be oxidation temperature=500/spl deg/C, layer thickness=100 nm, and Al-contents=0.48 (lattice-match) taking oxidation rate and surface morphology into account. The 50 nm-thick Al/sub 0.48/In/sub 0.52/As-oxide layer provides good current blocking for laser applications. Based on the above investigations, the fabricated PACIS laser shows a low threshold current of 4.0 mA and a high slope efficiency of 0.6 W/A. We have also confirmed high reliability under driving time over 3,000 hours at 85/spl deg/C, 5 mW. A 22-channel laser array consisted of PACIS structure have the average threshold current of 3.98 mA and the standard deviation of 0.42 mA.
在p-InP衬底上制备了一种1.3 /spl μ m Al-oxide密闭内条形激光器(PACIS)，用于低成本激光阵列。首先，我们研究了在InP衬底上生长的Al/sub x/In/sub 1-x/As层的氧化速率。考虑氧化速率和表面形貌，最佳条件为氧化温度=500/spl℃，层厚=100 nm, al含量=0.48(晶格匹配)。50 nm厚的Al/sub 0.48/In/sub 0.52/ as -氧化物层为激光应用提供了良好的电流阻挡。基于上述研究，所制备的PACIS激光器具有4.0 mA的低阈值电流和0.6 W/ a的高斜率效率。我们还证实，在85/spl度/C、5 mW的条件下，在超过3000小时的行驶时间内，该系统具有很高的可靠性。由PACIS结构组成的22通道激光阵列的平均阈值电流为3.98 mA，标准差为0.42 mA。
{"title":"High reliable, low threshold 1.3 /spl mu/m SL-QW PACIS (p-substrate Al-oxide Confined Inner Stripe) laser array","authors":"N. Iwai, T. Mukaihara, N. Yamanaka, M. Itoh, S. Arakawa, H. Shimizu, A. Kasukawa","doi":"10.1109/ICIPRM.1999.773674","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773674","url":null,"abstract":"A 1.3 /spl mu/m Al-oxide confined inner stripe laser on p-InP substrate (PACIS) has been demonstrated for low cost laser array application. First, we have investigated the oxidation rate of Al/sub x/In/sub 1-x/As layer grown on InP substrate. The optimum conditions were found to be oxidation temperature=500/spl deg/C, layer thickness=100 nm, and Al-contents=0.48 (lattice-match) taking oxidation rate and surface morphology into account. The 50 nm-thick Al/sub 0.48/In/sub 0.52/As-oxide layer provides good current blocking for laser applications. Based on the above investigations, the fabricated PACIS laser shows a low threshold current of 4.0 mA and a high slope efficiency of 0.6 W/A. We have also confirmed high reliability under driving time over 3,000 hours at 85/spl deg/C, 5 mW. A 22-channel laser array consisted of PACIS structure have the average threshold current of 3.98 mA and the standard deviation of 0.42 mA.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"240 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116873496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773676
B. Depreter, S. Verstuyft, I. Moerman, R. Baets, P. van Daele
We present MOCVD-grown InP-based microcavity light emitting diodes emitting at 1300 nm and 1550 nm. They contain 3 InGaAsP quantum wells sandwiched in a /spl lambda/ cavity defined by an InP/InGaAsP distributed Bragg reflector and a 200 nm evaporated Au mirror. Enhanced spectral purity is demonstrated and we observe a total external quantum efficiency of at least 5%. This represents a substantial increase compared to the maximum efficiency that can be extracted from a single facet of a Lambertian source. To the authors' knowledge these are the highest values ever reported for this kind of device.
{"title":"InP-based microcavity light emitting diodes emitting at 1.3 /spl mu/m and 1.55 /spl mu/m","authors":"B. Depreter, S. Verstuyft, I. Moerman, R. Baets, P. van Daele","doi":"10.1109/ICIPRM.1999.773676","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773676","url":null,"abstract":"We present MOCVD-grown InP-based microcavity light emitting diodes emitting at 1300 nm and 1550 nm. They contain 3 InGaAsP quantum wells sandwiched in a /spl lambda/ cavity defined by an InP/InGaAsP distributed Bragg reflector and a 200 nm evaporated Au mirror. Enhanced spectral purity is demonstrated and we observe a total external quantum efficiency of at least 5%. This represents a substantial increase compared to the maximum efficiency that can be extracted from a single facet of a Lambertian source. To the authors' knowledge these are the highest values ever reported for this kind of device.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117146189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773680
E. Rao, B. Theys, Y. Gottesman, H. Bissessnr
The Zn and Be doped (1 to 2/spl times/10/sup 18/ cm/sup -3/) p-InP samples are first hydrogenated by exposing to a deuterium (D) plasma to passivate (or neutralize) acceptors through dopant-H interactions. Later on, subsequent to 10 min isochronal anneals up to 450/spl deg/C, the reactivation of holes is monitored to determine activation energies, /spl sim/0.7 eV for Zn and 1.08 eV for Be. These values clearly imply a good thermal stability of acceptor passivation and open a way for the implementation of hydrogenation in the photon device technology.
{"title":"Thermal behavior of atomic hydrogen passivated acceptors in p-InP","authors":"E. Rao, B. Theys, Y. Gottesman, H. Bissessnr","doi":"10.1109/ICIPRM.1999.773680","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773680","url":null,"abstract":"The Zn and Be doped (1 to 2/spl times/10/sup 18/ cm/sup -3/) p-InP samples are first hydrogenated by exposing to a deuterium (D) plasma to passivate (or neutralize) acceptors through dopant-H interactions. Later on, subsequent to 10 min isochronal anneals up to 450/spl deg/C, the reactivation of holes is monitored to determine activation energies, /spl sim/0.7 eV for Zn and 1.08 eV for Be. These values clearly imply a good thermal stability of acceptor passivation and open a way for the implementation of hydrogenation in the photon device technology.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117157291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773724
J. Guthrie, D. Mensa, T. Mathew, Q. Lee, S. Krishnan, S. Jaganathan, S. Ceran, Y. Betser, M. Rodwell
We report HBT integrated circuits fabricated by substrate transfer on 50 mm diameter copper/polymer substrates. Layout and packaging of complex /spl sim/100 GHz circuits is facilitated by the microstrip wiring environment and the low ground lead inductance it affords. For ICs operating above 100 GHz, the process allows radical scaling of the microstrip dielectric thickness without requiring handling of delicate thinned III-V wafers. The process can provide greatly improved heatsinking. Furthermore, full 50 mm wafers can be processed incorporating transferred substrate HBTs, devices which have obtained >500 GHz f/sub max/.
{"title":"A 50 mm copper/polymer substrate HBT IC technology for >100 GHz MMICs","authors":"J. Guthrie, D. Mensa, T. Mathew, Q. Lee, S. Krishnan, S. Jaganathan, S. Ceran, Y. Betser, M. Rodwell","doi":"10.1109/ICIPRM.1999.773724","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773724","url":null,"abstract":"We report HBT integrated circuits fabricated by substrate transfer on 50 mm diameter copper/polymer substrates. Layout and packaging of complex /spl sim/100 GHz circuits is facilitated by the microstrip wiring environment and the low ground lead inductance it affords. For ICs operating above 100 GHz, the process allows radical scaling of the microstrip dielectric thickness without requiring handling of delicate thinned III-V wafers. The process can provide greatly improved heatsinking. Furthermore, full 50 mm wafers can be processed incorporating transferred substrate HBTs, devices which have obtained >500 GHz f/sub max/.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121005451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773654
R. Westphalen, G. Landgren, B. Stalnacke, R. Beccard
Growth of distributed Bragg reflectors and strain compensated MQW for 1550 nm VCSEL have been investigated in a AIX 200/4 LP-MOVPE system with a 3/spl times/2" wafer configuration using an improved liner and susceptor configuration. The shift in the stopband wavelength for DBR could be reduced by one order of magnitude down to +0.6% (+9 nm) within 40 mm diameter compared to the standard setup. For 1420 nm quaternary layers used in such DBR the area with a wavelength shift of less the 1 nm can nearly be doubled. In case of strain compensated MQW a similar improvement in wavelength homogeneity was observed, mainly due to reduced thickness variation from /spl plusmn/2.5% to /spl plusmn/0.8%.
{"title":"Improved homogeneity of LP-MOVPE grown InP/GaInAsP heterostructure for DBR using an optimized liner and susceptor arrangement","authors":"R. Westphalen, G. Landgren, B. Stalnacke, R. Beccard","doi":"10.1109/ICIPRM.1999.773654","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773654","url":null,"abstract":"Growth of distributed Bragg reflectors and strain compensated MQW for 1550 nm VCSEL have been investigated in a AIX 200/4 LP-MOVPE system with a 3/spl times/2\" wafer configuration using an improved liner and susceptor configuration. The shift in the stopband wavelength for DBR could be reduced by one order of magnitude down to +0.6% (+9 nm) within 40 mm diameter compared to the standard setup. For 1420 nm quaternary layers used in such DBR the area with a wavelength shift of less the 1 nm can nearly be doubled. In case of strain compensated MQW a similar improvement in wavelength homogeneity was observed, mainly due to reduced thickness variation from /spl plusmn/2.5% to /spl plusmn/0.8%.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115113009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773665
D. Sawdai, X. Zhang, D. Cui, D. Pavlidis, P. Bhattacharya
For the first time, the effect of base thickness and parasitic collector resistance on InP-based PNP HBTs was determined experimentally. HBTs with 350-/spl Aring/ and 900-/spl Aring/ base layers and self-aligned collector contacts demonstrated DC gain of 21.3 and 5.9, f/sub T/ of 18.6 and 8.5 GHz, and f/sub max/ of 27.3 and 20.8 GHz, respectively. This is the highest f/sub T/ reported for any InP-based PNP HBT. Analysis of these HBTs demonstrated that recombination of holes in the neutral base limited the DC gain, and hole transit across the base was the most significant component of /spl tau//sub ec/. In addition, comparison of HBTs with and without self-aligned collectors demonstrated that collector series resistance had a minor but noticeable impact on f/sub T/ as well as the gain and power-added efficiency at 8 GHz.
{"title":"Properties of fully self-aligned InAlAs/InGaAs PNP HBTs with very thin bases","authors":"D. Sawdai, X. Zhang, D. Cui, D. Pavlidis, P. Bhattacharya","doi":"10.1109/ICIPRM.1999.773665","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773665","url":null,"abstract":"For the first time, the effect of base thickness and parasitic collector resistance on InP-based PNP HBTs was determined experimentally. HBTs with 350-/spl Aring/ and 900-/spl Aring/ base layers and self-aligned collector contacts demonstrated DC gain of 21.3 and 5.9, f/sub T/ of 18.6 and 8.5 GHz, and f/sub max/ of 27.3 and 20.8 GHz, respectively. This is the highest f/sub T/ reported for any InP-based PNP HBT. Analysis of these HBTs demonstrated that recombination of holes in the neutral base limited the DC gain, and hole transit across the base was the most significant component of /spl tau//sub ec/. In addition, comparison of HBTs with and without self-aligned collectors demonstrated that collector series resistance had a minor but noticeable impact on f/sub T/ as well as the gain and power-added efficiency at 8 GHz.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121887801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773715
J. Thuret, C. Gonzalez, J. Benchimol, M. Riet, P. Berdaguer
We report on the performance of a graded-base InP/InGaAs heterojunction phototransistor (HPT) as a direct photodetector and an optoelectronic up-converter in 30 GHz band, investigated at a wavelength of 1.55 /spl mu/m. HPT performances were improved according to the optimised base contact design in order to obtain a higher optical gain G/sub opt/ up to the millimetre-wave range. It is also shown, by analysis and measurements, that a complete description of HPTs can be made using a three-port network representation, with the optical window as an input port. This approach has several advantages in particular, the extraction of the 'optical' transducer power gain G/sub OT/ of the HPTs, needed for designing optoelectronic integrated circuits, OEIC.
{"title":"High-speed InP/InGaAs heterojunction phototransistor for millimetre-wave fibre radio communications","authors":"J. Thuret, C. Gonzalez, J. Benchimol, M. Riet, P. Berdaguer","doi":"10.1109/ICIPRM.1999.773715","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773715","url":null,"abstract":"We report on the performance of a graded-base InP/InGaAs heterojunction phototransistor (HPT) as a direct photodetector and an optoelectronic up-converter in 30 GHz band, investigated at a wavelength of 1.55 /spl mu/m. HPT performances were improved according to the optimised base contact design in order to obtain a higher optical gain G/sub opt/ up to the millimetre-wave range. It is also shown, by analysis and measurements, that a complete description of HPTs can be made using a three-port network representation, with the optical window as an input port. This approach has several advantages in particular, the extraction of the 'optical' transducer power gain G/sub OT/ of the HPTs, needed for designing optoelectronic integrated circuits, OEIC.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128445651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：