A. Shakouri, C. Labounty, P. Abraham, J. Piprek, J. Bowers
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引用次数: 3
Abstract
Thermoelectric coolers are important elements of many optoelectronic systems. Current commercial coolers are based on non-conventional semiconductors such as BiTe. In this paper we analyze the prospect of InP based material to fabricate coolers that can be integrated with optoelectronic components. Experimental results are shown where thermionic emission current in InGaAs/InGaAsP heterostructures is used to enhance the cooling power of conventional bulk material. About one degree cooling over 1 /spl mu/m thick barrier is observed (i.e. a cooling power of 200-300 W/cm/sup 2/). Calculations for InGaAs/InAlAs superlattices show that single stage cooling by as much as 20-30 degrees should be possible.
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